Gloystein, Alexander and Möller, Christoph and Nilius, Niklas (2019) Negative differential conductance in the electron-transport through copper-rich cuprous oxide thin films. New Journal of Physics, 21 (11). p. 113026. ISSN 1367-2630

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Abstract

Copper deposition onto Cu2O thin films grown on Au(111) results in the formation of monolayer islands with hexagonal and rhombic shapes, as observed with scanning tunnelling microscopy. The differential conductance through the Cu islands is governed by distinct quantum well states (QWS), accompanied by pronounced electron standing wave patterns. Below the onset of the QWS, an extended region of negative differential conductance opens up, in which also the tunnelling current declines markedly with increasing bias voltage. The effect is assigned to the quantised electronic structure of the Cu islands in combination with the p-type conductance behaviour of the oxide film underneath. The latter promotes electron transport across the islands around the Fermi level, but leads to a closure of this transport channel at negative bias.

Item Type:	Article
Additional Information:	Publiziert mit Hilfe des DFG-geförderten Open Access-Publikationsfonds der Carl von Ossietzky Universität Oldenburg.
Subjects:	Science and mathematics > Physics
Divisions:	Faculty of Mathematics and Science > Institute of Physics (IfP)
Date Deposited:	20 Mar 2020 11:42
Last Modified:	20 Mar 2020 11:42
URI:	https://oops.uni-oldenburg.de/id/eprint/4545
URN:	urn:nbn:de:gbv:715-oops-46269
DOI:	10.1088/1367-2630/ab51f2
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