Govor, L. V. and Parisi, Jürgen (2019) Increase of saturation current in unipolar field-effect transistor due to bulk electric conductance of organic semiconductor. AIP Advances, 9 (2). 025313. ISSN 2158-3226

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Abstract

We considered an organic field-effect transistor (OFET) based on a squaraine (SQ) fiber, where the electric conductance of the accumulation channel is comparable with the bulk conductance of the SQ fiber. Each of the measured output and transfer current-voltage characteristics was decomposed into two components, representing the conductance of the accumulation channel and the bulk. We present in detail, how the bulk conductance of the fiber can transform the output characteristics of the unipolar OFET. For positive drain and gate voltage, the hole injection from the drain always takes place when a drain voltage is applied. Depending on the ratio between the electron density (ns) injected from the source into accumulation channel and the hole density (pb) injected from the drain into the bulk, the saturation current of the unipolar OFET is constant (pb < ns) or exhibits increase (pb ≥ ns).

Item Type: Article
Additional Information: Publiziert mit Hilfe des DFG-geförderten Open Access-Publikationsfonds der Carl von Ossietzky Universität Oldenburg.
Subjects: Science and mathematics > Physics
Divisions: Faculty of Mathematics and Science > Institute of Physics (IfP)
Date Deposited: 18 Mar 2020 13:01
Last Modified: 18 Mar 2020 13:01
URI: https://oops.uni-oldenburg.de/id/eprint/4490
URN: urn:nbn:de:gbv:715-oops-45715
DOI: 10.1063/1.5088117
Nutzungslizenz:

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